Modeling of light absorption in solid state imagers

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dc.contributor.advisor Fuller, Lynn Philbrick, Robert H. 2009-09-21T12:48:39Z 2009-09-21T12:48:39Z 1990-01
dc.description.abstract In this paper, a model for predicting the quantum efficiency and responsivity of silicon based solid state photodiodes is presented. The model is first developed using semiconductor theory and then implemented in a computer software program. Correct operation of the modeling program is verified by comparing the published reflectance curves of several silicon dioxide-silicon substrate samples with the reflectance curves produced by the modeling program. Next, a system capable of measuring photodiode quantum efficiency and responsivity is presented and used to measure quantum efficiency and responsivity for a photodiode specimen. Finally, the measured and modeled quantum efficiency and responsivity results for the photodiode specimen are compared and found to be in good agreement. en_US
dc.language.iso en_US en_US
dc.relation RIT Scholars content from RIT Digital Media Library has moved from to RIT Scholar Works, please update your feeds & links!
dc.subject Photodiodes en_US
dc.subject Optoelectronic devices en_US
dc.subject Computer modeling en_US
dc.subject Light absorption en_US
dc.subject.lcc TA1750 .P44 1990
dc.subject.lcsh Optoelectronic devices--Testing en_US
dc.subject.lcsh Diodes, Semiconductor--Testing en_US
dc.subject.lcsh Light absorption--Computer simulation en_US
dc.title Modeling of light absorption in solid state imagers en_US
dc.type Thesis en_US College of Engineering en_US
dc.description.department Department of Electrical Engineering en_US

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