Electrodeposited CuInSe2 thin film junctions

Show full item record

Title: Electrodeposited CuInSe2 thin film junctions
Author: Raffaelle, Ryne; Mantovani, J.; Bailey, S.; Hepp, A.; Gordon, E.; Haraway, R.
Abstract: We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectrocopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.
Record URI: http://hdl.handle.net/1850/11343
Date: 1997-11

Files in this item

Files Size Format View
RRaffaelleConfProc11-1997.pdf 416.5Kb PDF View/Open

The following license files are associated with this item:

This item appears in the following Collection(s)

Show full item record

Search RIT DML


Advanced Search

Browse