Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope

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dc.contributor.author Jang, J.
dc.contributor.author Zhao, W.
dc.contributor.author Bae, W.
dc.contributor.author Selvanathan, D.
dc.contributor.author Rommel, Sean
dc.contributor.author Adesida, I.
dc.contributor.author Lepore, A.
dc.contributor.author Kwakernaak, M.
dc.contributor.author Abeles, J.
dc.date.accessioned 2010-02-03T22:03:35Z
dc.date.available 2010-02-03T22:03:35Z
dc.date.issued 2003
dc.identifier.citation Applied Physics Letters, vol. 83, no. 20, pp. 4116-4118, 2003 en_US
dc.identifier.uri http://hdl.handle.net/1850/11397
dc.description.abstract An atomic force microscope (AFM) with an ultrasharp tip was used to directly measure the sidewall profile of InP/InGaAsP waveguide structures etched using an inductively coupled plasma reactive ion etching (ICP-RIE) in C1/sub 2/-based plasma. A special staircase pattern was devised to allow AFM tip to access the etched sidewall of the waveguides in the normal direction. Statistical information such as correlation length and rms roughness of the sidewall profile obtained through three-dimensional imaging by AFM has been presented. rms roughness as low as 3.45 nm was measured on the sidewall of 4-micrometers-deep etched InP/InGaAsP heterostructures. en_US
dc.language.iso en_US en_US
dc.publisher American Institute of Physics en_US
dc.relation.ispartofseries vol. 83 en_US
dc.relation.ispartofseries no. 20 en_US
dc.title Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope en_US
dc.type Article en_US

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