Design, synthesis and characterization of poly(trimethylsilylmethyl methacrylate-co-chloromethyl styrene) for 193-nm exposure

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dc.contributor.author Smith, Bruce
dc.contributor.author Mixon, David
dc.contributor.author Novembre, Anthony
dc.contributor.author Butt, Shahid
dc.date.accessioned 2010-02-03T22:04:49Z
dc.date.available 2010-02-03T22:04:49Z
dc.date.issued 1995
dc.identifier.citation Proceedings of the SPIE Conference on Advances in Resist Technology and Processing XII, vol. 2438, pp. 504-512, Santa Clara, California, 1995 en_US
dc.identifier.uri http://hdl.handle.net/1850/11401
dc.description.abstract Requirements of materials for lithography at 193 am limit single layer resist candidates to those with high optical transmission. A random copolymer of trimethylsilymethyl methacrylate (SI) and chloromethyl styrene (CMS), [P(SI-CMS)], has been shown to be highly sensitive negative 193 nm resist in both bi-layer and single layer modes. Such resists show maximum sensitivity with an optical absorbance of the coating oflog10e, or 0.434. Through control of the mole ratio of the monomers in the P(SI-CMS) copolymer, absorbance values have been optimized for film thicknesses of0.2 - 0.3 micrometers for 90: 10 SI:CMS, 0.35 - 0.45 m for 95:5 SI:CMS and 0.55 -0.65 pm for 98:2 SI:CMS. Optical absorbance ofthe CMS is at a maximum in the 190 to 205 nm range, allowing the copolymer to be tailored for a large degree of crosslinking at a relatively low CMS concentration. Spray development of these materials is performed with ethanol, followed by a two step methanol I isopropanol-water rinse. Sensitivities are on the order of 4 to 20 mj/cm^2 at M near 40 000 g/mol. Furthermore, these ratios have been found to produce optimum 02 etch resistance. en_US
dc.language.iso en_US en_US
dc.publisher SPIE en_US
dc.relation.ispartofseries vol. 2438 en_US
dc.title Design, synthesis and characterization of poly(trimethylsilylmethyl methacrylate-co-chloromethyl styrene) for 193-nm exposure en_US
dc.type Proceedings en_US

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