A 193 nm deep-UV lithography system using a line-narrowed ArF excimer laser

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dc.contributor.author Smith, Bruce
dc.contributor.author Gower, Malcolm
dc.contributor.author Westcott, Mark
dc.contributor.author Fuller, Lynn
dc.date.accessioned 2010-02-03T22:05:46Z
dc.date.available 2010-02-03T22:05:46Z
dc.date.issued 1994-03-03
dc.identifier.citation Proceedings of Optical/Laser Microlithography, vol. 1927, San Jose, California, March 3, 1993 en_US
dc.identifier.uri http://hdl.handle.net/1850/11404
dc.description.abstract A small field refractive projection system for operation at the 193.3 nm wavelength of a spectrally narrowed ArF excimer laser is being constructed. The 1 mm field, 20X system operates with a variable objective lens numerical aperture from 0.30 to 0.60, variable partial coherence, and control over illumination fill and mask tilt. A 30 W maximum power ArF excimer laser has been spectrally line-narrowed through incorporation of tilted Fabry-Perot etalons into the laser cavity, allowing linewidths on the order of7 cm' (26 pm) with one etalon and 0.5 cm1 (2pm) with two etalons. This work reports laser line narrowing and lens performance results. Simulations of aerial image intensity distributions from lens aberration data will be presented for 0.25 and 0.20 micron geometry. en_US
dc.language.iso en_US en_US
dc.publisher SPIE en_US
dc.relation.ispartofseries vol. 1 en_US
dc.title A 193 nm deep-UV lithography system using a line-narrowed ArF excimer laser en_US
dc.type Proceedings en_US

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