Epitaxial Si-based tunnel diodes

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dc.contributor.author Thompson, P.
dc.contributor.author Hobart, K.
dc.contributor.author Twigg, M.
dc.contributor.author Rommel, Sean
dc.contributor.author Jin, N.
dc.contributor.author Berger, P.
dc.contributor.author Lake, R.
dc.contributor.author Seabaugh, A.
dc.contributor.author Chi, P.
dc.contributor.author Simons, D.
dc.date.accessioned 2010-02-03T22:06:01Z
dc.date.available 2010-02-03T22:06:01Z
dc.date.issued 2000-05-29
dc.identifier.citation Symposium F of the E-MRS Spring Meeting, vol. 380, no. 1-2, Strasbourg , France, 2000 en_US
dc.identifier.uri http://hdl.handle.net/1850/11405
dc.description.abstract Tunneling devices in combination with transistors offer a way to extend the performance of existing technologies by increasing circuit speed and decreasing static power dissipation. We have investigated Si-based tunnel diodes grown using molecular beam epitaxy (MBE). The basic structure is a p + layer formed by B delta doping, an undoped spacer layer, and an n + layer formed by Sb delta doping. In the n-on-p configuration, low temperature epitaxy (300-370°C) was used to minimize the effect of dopant segregation and diffusion. In the p-on-n configuration, a combination of growth temperatures from 320 to 550°C was used to exploit the Sb segregation to obtain a low Sb concentration in the B-doped layer. Post-growth rapid thermal anneals for 1 min in the temperature interval between 600 and 825°C were required to optimize the device characteristics. Jp , the peak current density, and the peak-to-valley current ratio (PVCR), were measured at room temperature. An n-on-p diode having a spacer layer composed of 4 nm Sio.6Geo.4 , bounded on either side by 1 nm Si, had a Jp = 2.3 kA/cm2 and PVCR = 2.05. A p-on-n tunnel diode with an 8 nm Si spacer (5 nm grown at 320°C, 3 nm grown at 550°C) had a Jp = 2.6 kA/cm2 and PVCR = 1.7. en_US
dc.language.iso en_US en_US
dc.publisher Elsevier en_US
dc.relation RIT Scholars content from RIT Digital Media Library has moved from http://ritdml.rit.edu/handle/1850/11405 to RIT Scholar Works http://scholarworks.rit.edu/article/1417, please update your feeds & links!
dc.subject Delta doping en_US
dc.subject Epitaxy en_US
dc.subject Silicon en_US
dc.subject Silicon-germanium en_US
dc.subject Tunnel diodes en_US
dc.title Epitaxial Si-based tunnel diodes en_US
dc.type Article en_US

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