Extraction of process specific photolithogtaphy model parameters

Show full item record

Title: Extraction of process specific photolithogtaphy model parameters
Author: Drennan, Patrick; Smith, Bruce
Abstract: In order to truly represent photolithography through simulation, the exposure, bake and development models and model parameters must be accurate. Models for the pre-bake, exposure, post-exposure/pre-development bake, and the development have been developed and are available with most commercial simulators.15 The extraction of the exposure parameters has been established.13 However, the extraction of the bake and development model parameters have been subject to question'3 given the immersion type development that has been required for the measurement of the development rate and henceforth the extraction of these parameters. Using the approach for the measurement of the in-situ development rate, developed in the first paper of this two paper series, the model parameters were extracted for Shipley 812 resist with Shipley MF312 developer. Development rates for exposures of 66, 90 and ll4rnJ/cm2 were measured. It was discovered that the set of Kim model parameters, R1 through R, were highly correlated with the combination of the Dill exposure parameters. Thus, for A=O.581pin', B=O.O82im1, C=O.013cm2/mJ, the parameters R1=25.559micrometers/min, R2=1O.45lmicrometersm/min, R3=1.879, R4=O.1l2, R5=1.586, R,=0.000micrometers, and a=O.OO16im were extracted. A comparison of simulated data using the extracted model parameters with the measured data demonstrated the quality of the fit.
Record URI: http://hdl.handle.net/1850/11412
Date: 1994-03

Files in this item

Files Size Format View
BSmithConfProc03-1994.pdf 718.2Kb PDF View/Open

The following license files are associated with this item:

This item appears in the following Collection(s)

Show full item record

Search RIT DML


Advanced Search

Browse