Benefiting from polarization - Effects on high-NA imaging

Show simple item record Smith, Bruce Zavyalova, Lena Estroff, Andrew 2010-02-03T22:08:51Z 2010-02-03T22:08:51Z 2004-06
dc.identifier.citation Proceedings of the SPIE Conference on Optical Microlithography XVII, vol. 5377, pp. 68-79, Bellingham, Washington, June 2004 en_US
dc.description.abstract The onset of lithographic technology involving extreme numerical aperture (NA) values introduces critical technical issues that are now receiving particular attention. Projection lithography with NA values above 0.90 is necessary for future generation devices. The introduction of immersion lithography enables even larger angles, resulting in NA values of 1.2 and above. The imaging effects from oblique angles, electric field polarization, optical interference, optical reflection, and aberration can be significant. This paper addresses polarization considerations at critical locations in the optical path of a projection system, namely in the illuminator, at the mask, and in the photoresist. Several issues are addressed including TE and azimuthal polarized illumination, wire grid polarization effects for real thin film mask materials, and multilayer resist AR coatings for high NA and polarization. en_US
dc.language.iso en_US en_US
dc.publisher SPIE en_US
dc.relation RIT Scholars content from RIT Digital Media Library has moved from to RIT Scholar Works, please update your feeds & links!
dc.relation.ispartofseries vol. 5377 en_US
dc.subject High NA en_US
dc.subject Immersion lithography en_US
dc.subject Optical lithography en_US
dc.subject Polarization en_US
dc.title Benefiting from polarization - Effects on high-NA imaging en_US
dc.type Proceedings en_US

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