Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications

Show full item record

Title: Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications
Author: Chung, Sung-Yong; Park, Si-Young; Daulton, Jeffrey; Yu, Ronghua; Berger, Paul; Thompson, Phillip
Abstract: Si-based resonant interband tunnel diodes (RITD) were monolithically integrated with Si/SiGe heterojunction bipolar transistors (HBT) on silicon substrates effectively creating a 3-terminal negative differential resistance (NDR) device. We demonstrate that the room temperature NDR in the IC–VEC characteristics under common emitter configuration can be controlled by a third terminal which is the basis of the integrated circuit. The estimated NDR values from the DC I–V characteristics, assuming that the NDR is linear, can be varied from about -27.5 Ω to -180 Ω with respect to VCE in the range of 0.96 V–1.16 V.
Record URI: http://hdl.handle.net/1850/11421
Date: 2004-06

Files in this item

Files Size Format View
SKurinecArticle06-2004.pdf 456.3Kb PDF View/Open

The following license files are associated with this item:

This item appears in the following Collection(s)

Show full item record

Search RIT DML


Advanced Search

Browse