Exploring Si/SiGe quantum-well thin-film thermoelectric devices using TCAD simulation

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dc.contributor.advisor Hirschman, Karl
dc.contributor.advisor Pearson, Robert
dc.contributor.advisor Stevens, Robert
dc.contributor.advisor Couillard, Greg
dc.contributor.author Hu, Shaoting
dc.date.accessioned 2012-10-08T14:37:48Z
dc.date.available 2012-10-08T14:37:48Z
dc.date.issued 2012-05-22
dc.identifier.uri http://hdl.handle.net/1850/15348
dc.description.abstract There is an increasing demand for energy as a result of industrial development and rapid growth in global population. To date, most energy supply comes from traditional sources like coal and gas, which are nonrenewable energy sources. The combustion of fossil fuels produces greenhouse gases and pollution, which deteriorates our ecosystem. Extensive attention and research has been given to the development of renewable energy sources, including solar, wind, tides, geothermal heat, hydroelectricity, thermoelectricity and <italic>et al<italic>. Thermoelectric (TE) applications can be categorized mainly into power generation and cooling operation utilizing Seebeck and Peltier effects, respectively. The further development of TE devices is limited by the low TEG efficiency and the low cooling coefficient of performance due to the limitation of the material figure of merit (<italic>ZT<italic>). In the 1990s, the advent of low dimensional (quantum well and quantum wire) thermoelectric systems triggered the breakthrough of improved <italic>ZT<italic> via two basic mechanisms: 1) increased density of states near Fermi level, and 2) deceased thermal conductivity by increased phonon scattering at material boundaries [1], [2]. Despite theoretical and experimental success using low dimensional TE systems reported by different universities or laboratories, the efficiency and coefficient of performance of commercially available bulk thermoelectric devices remain at a mere 5%-10%. The Silvaco Inc. device simulator (ATLAS) is used to explore the physics and evaluate the performance of quantum well TE devices on single crystalline silicon-on- glass (SiOG). Owing to the distinguish features of SiOG substrate, including lower thermal conductivity, microfabrication compatibility, good template for QW layers epitaxially grown atop, Corning Incorporated are especially interested in Si/SiGe quantum well thermoelectrical devices for automobile waste heat recovery application. In this thesis, model adjustments were implemented to calibrate bulk Si & SiGe parameters, and capture the electrical and thermal effects from quantum-sized dimensions. Design parameters, which optimize the thermal power and <italic>ZT<italic> for <italic>n<italic>- and <italic>p<italic>- type Si/SiGe QW structures were established. The electrical and thermal parasitic effects from SOI and SiOG to QW layers were studied. Moreover, equivalent circuit model was developed which demonstrates the performance advantage of SiOG as a low-loss substrate. en_US
dc.language.iso en_US en_US
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dc.subject Si/SiGe quantum well en_US
dc.subject TCAD simulation en_US
dc.subject Thermoelectric en_US
dc.subject.lcc TK2950 .H8 2012
dc.subject.lcsh Thermoelectric apparatus and appliances--Computer-aided design en_US
dc.subject.lcsh Quantum wells en_US
dc.subject.lcsh Silicon alloys--Structure en_US
dc.subject.lcsh Germanium alloys--Structure en_US
dc.title Exploring Si/SiGe quantum-well thin-film thermoelectric devices using TCAD simulation en_US
dc.type Thesis en_US
dc.description.college Kate Gleason College of Engineering en_US
dc.description.department Electrical and Microelectronic Engineering Department en_US

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