Systematic inclusion of defects in pure carbon single-wall nanotubes and their effect on the Raman D-band

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Title: Systematic inclusion of defects in pure carbon single-wall nanotubes and their effect on the Raman D-band
Author: Dillon, Anne; Parilla, Philip; Alleman, Jeffrey; Gennett, Thomas; Jones, K.; Heben, Michael
Abstract: The Raman D-band feature (∼1350 cm[-][1]) is examined with 2.54 eV excitation for pure bulk carbon single-wall nanotube samples before and after treatments that increase defect densities. Upon employing mass-transport-limited oxidation to introduce defects, the D-band intensity increases approximately linearly with reaction time. A relatively constant ratio of the D-band intensity and the major tangential G-band intensity (D/G) is observed for the purified samples examined at 2.54 and 1.96 eV suggesting a characteristic number of defects is introduced for given synthesis and purification processes. The DIG ratio is ∼1/90 and 1/40 for excitation at 2.54 and 1.96 eV, respectively.
Record URI: http://hdl.handle.net/1850/2180
Publishers URL: http://dx.doi.org/10.1016/j.cplett.2004.11.104
Date: 2005-01-11

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