Adhesion of copper to Teflon ® poly(tetrafluoroethylene-co-perfluoropropyl vinyl ether) (PFA) surfaces modified by vacuum UV photo-oxidation downstream from argon microwave plasma

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dc.contributor.author Dasilva, W. en_US
dc.contributor.author Entenberg, Alan en_US
dc.contributor.author Kahn, B. en_US
dc.contributor.author Debies, Thomas en_US
dc.contributor.author Takacs, Gerald en_US
dc.date.accessioned 2006-07-19T20:00:26Z en_US
dc.date.available 2006-07-19T20:00:26Z en_US
dc.date.issued 2005 en_US
dc.identifier.citation Materials for Space Applications 851 (2005) NN9.2.1-NN9.2.6 en_US
dc.identifier.uri http://hdl.handle.net/1850/2233 en_US
dc.description Archived at: http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2723&DID=95820 en_US
dc.description.abstract Good practical adhesion of sputter-deposited Cu is achieved to poly(tetrafluoroethylene-co-perfluoropropyl vinyl ether) (PFA) surfaces at short treatment times of vacuum UV (VUV) photo-oxidation downstream from Ar microwave (MW) plasma. Factors contributing to the adhesion include: (1) an improvement in wettability as observed by water contact angle measurements; (2) surface roughening; (3) defluorination of the surface; (4) cross-linking at the surface and (5) incorporation of oxygen as CF-O-CF2, CF2-O-CF2 and CF-O-CnF2n+1 moieties. With long treatment times, a cohesive failure occurred within the modified PFA and not at the Cu-PFA interface due to extensive chain scission weakening its mechanical properties. en_US
dc.format.extent 26759 bytes en_US
dc.format.mimetype application/pdf en_US
dc.language.iso en_US en_US
dc.publisher Materials Research Society Proceedings: Materials for Space Applications en_US
dc.title Adhesion of copper to Teflon ® poly(tetrafluoroethylene-co-perfluoropropyl vinyl ether) (PFA) surfaces modified by vacuum UV photo-oxidation downstream from argon microwave plasma en_US
dc.type Abstract en_US
dc.subject.keyword Adhesion en_US
dc.subject.keyword Copper en_US
dc.subject.keyword Sputter deposition en_US
dc.subject.keyword Teflon en_US

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