The integration of Si-based resonant interband

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Title: The integration of Si-based resonant interband
Author: Sudirgo, Stephen
Abstract: eports the first demonstration of the integration of CMOS and Si/SiGe resonant interband tunnel diode (RITD). In Si-based material, recent breakthrough in Si/SiGe RITD grown using molecular beam epitaxy (MBE) made the integration with CMOS possible. The resultant devices enabled the realization of RITD CMOS circuitry, and a NMOS-RITD MOBILE latch was demonstrated in Si, all enabling digital and ternary circuit design for density storage
Record URI: http://hdl.handle.net/1850/5192
Date: 2003-04

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