A low-noise CCD electrometer using buried-channel LDD nMOSFETs

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dc.contributor.advisor Name Illegible
dc.contributor.author Stevens, Eric G.
dc.date.accessioned 2009-04-08T15:19:43Z
dc.date.available 2009-04-08T15:19:43Z
dc.date.issued 1987-06
dc.identifier.uri http://hdl.handle.net/1850/9018
dc.description.abstract A iow-noise, CCD electrometer is presented that makes use of devices akin to buried-channel, LDD NMOS FETs. Self-aligned source and drain contacts are used that result in high performance and a simplified process. These devices were fabricated in a scaled, buried-channel NMOS CCD process without adding any process complexity. In spite of the higher capacitances associated with the scaled process (higher levels of doping and thinner gate oxides) in which this device was constructed, the input referred voltage responsivity or sensitivity of this electrometer is 15 /xV/electron, the highest reported to date. This high responsivity leads to superior noise performance. At room temperature, the output amplifier's input-referred-noise component is only 7.5 electrons rms over a -3dB bandwidth of 35.9 MHz. The total input-referred noire of this wide-band electrometer is only 7.2 electrons rms, with correlated double-sampling employed to eliminate kTC noise. Therefore, the noise performance has been greatly improved over the current state-of-the-art, floating-diffusion, amplifier-type electrometers. en_US
dc.language.iso en_US en_US
dc.relation RIT Scholars content from RIT Digital Media Library has moved from http://ritdml.rit.edu/handle/1850/9018 to RIT Scholar Works http://scholarworks.rit.edu/theses/5598, please update your feeds & links!
dc.subject Electrometers en_US
dc.subject NMOS en_US
dc.subject Integrated circuits en_US
dc.subject.lcc TK7871.99.C45S73 1987
dc.subject.lcsh Charge coupled devices--Design and construction en_US
dc.subject.lcsh Electrometer--Design and construction en_US
dc.subject.lcsh Integrated circuits--Design and construction en_US
dc.title A low-noise CCD electrometer using buried-channel LDD nMOSFETs en_US
dc.type Thesis en_US
dc.description.college College of Engineering en_US
dc.description.department Department of Electrical Engineering en_US

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