Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

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Title: Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
Author: Jin, Niu; Chung, Sung-Yong; Rice, Anthony; Berger, Paul; Thompson, Phillip; Rivas, Christian; Lake, Roger; Sudirgo, Stephen; Kempisty, Jeremy; Curanovic, Branislav; Rommel, Sean; Hirschman, Karl; Kurinec, Santosh; Chi, Peter; Simons, David
Abstract: Si/SiGe resonant interband tunnel diodes (RITDs) employing -doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR) figure-of-merit, as well as addressing issues of manufacturability and CMOS integration. Thin SiGe layers sandwiching the B -doping spike used to suppress B out-diffusion are discussed. A room-temperature PVCR of 3.6 was measured with a peak current density of 0.3 kA/cm2. Results clearly show that by introducing SiGe layers to clad the B -doping layer, B diffusion is suppressed during post-growth annealing, which raises the thermal budget. A higher RTA temperature appears to be more effective in reducing defects and results in a lower valley current and higher PVCR. RITDs grown by selective area molecular beam epitaxy (MBE) have been realized inside of low-temperature oxide openings, with performance comparable with RITDs grown on bulk substrates.
Description: Copyright 2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Record URI: http://hdl.handle.net/1850/9082
Date: 2003-09

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