Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Show simple item record

dc.contributor.author Thompson, Phillip
dc.contributor.author Hobart, Karl
dc.contributor.author Twigg, Mark
dc.contributor.author Jernigan, Glenn
dc.contributor.author Dillon, Thomas
dc.contributor.author Rommel, Sean
dc.contributor.author Berger, Paul
dc.contributor.author Simons, David
dc.contributor.author Chi, Peter
dc.contributor.author Lake, Roger
dc.contributor.author Seabaugh, Alan
dc.date.accessioned 2009-06-25T16:24:20Z
dc.date.available 2009-06-25T16:24:20Z
dc.date.issued 1999-08-30
dc.identifier.uri http://hdl.handle.net/1850/9938
dc.description Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/ en_US
dc.description.abstract Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature, with peak-to-valley current ratios greater than 2, are presented. The structures were grown using low-temperature ~320 °C! molecular-beam epitaxy followed by a postgrowth anneal. After a 650 °C, 1 min rapid thermal anneal, the average peak-to-valley current ratio was 2.05 for a set of seven adjacent diodes. The atomic distribution profiles of the as-grown and annealed structures were obtained by secondary ion mass spectrometry. Based on these measurements, the band structure was modeled and current–voltage trends were predicted. These diodes are compatible with transistor integration. en_US
dc.language.iso en_US en_US
dc.publisher Applied Physics Letters en_US
dc.relation.ispartofseries Vol. 75 en_US
dc.relation.ispartofseries No. 9 en_US
dc.title Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy en_US
dc.type Article en_US

Files in this item

Files Size Format View
SRommelArticle-08-1999.pdf 82.13Kb PDF View/Open

This item appears in the following Collection(s)

Show simple item record

Search RIT DML


Advanced Search

Browse