Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Show simple item record Thompson, Phillip Hobart, Karl Twigg, Mark Jernigan, Glenn Dillon, Thomas Rommel, Sean Berger, Paul Simons, David Chi, Peter Lake, Roger Seabaugh, Alan 2009-06-25T16:24:20Z 2009-06-25T16:24:20Z 1999-08-30
dc.description Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at en_US
dc.description.abstract Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature, with peak-to-valley current ratios greater than 2, are presented. The structures were grown using low-temperature ~320 °C! molecular-beam epitaxy followed by a postgrowth anneal. After a 650 °C, 1 min rapid thermal anneal, the average peak-to-valley current ratio was 2.05 for a set of seven adjacent diodes. The atomic distribution profiles of the as-grown and annealed structures were obtained by secondary ion mass spectrometry. Based on these measurements, the band structure was modeled and current–voltage trends were predicted. These diodes are compatible with transistor integration. en_US
dc.language.iso en_US en_US
dc.publisher Applied Physics Letters en_US
dc.relation RIT Scholars content from RIT Digital Media Library has moved from to RIT Scholar Works, please update your feeds & links!
dc.relation.ispartofseries Vol. 75 en_US
dc.relation.ispartofseries No. 9 en_US
dc.title Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy en_US
dc.type Article en_US

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