Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS MOBILE Latch with High Voltage Swing

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Title: Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS MOBILE Latch with High Voltage Swing
Author: Sudirgo, S.; Nandgaonkar, R.P.; Curanovic, B.; Hebding, J.; Hirschman, K.D.; Islam, S.S.; Rommel, Sean; Kurinec, Santosh; Thompson, P.E.; Jin, N.; Berger, P.R.
Abstract: The Si/SiGe RITDs grown by MBE have been monolithically integrated with CMOS for the first time. The integrated devices resulted in a PVCR (peak-to-valley current ratio) of 2.8 at room temperature, showing promise towards the realization of RITD/CMOS circuitry. A RITD-NMOS MOBILE latch has been demonstrated in Si. This logic element enables digital and ternary circuit design for high density storage. The I-V characteristics of the integrated CMOS/RITD devices and ID-VD characteristics of NMOS and PMOS have been studied.
Description: IEEE conference proceedings of the 2003 international Semiconductor Device Research Symposium.
Record URI: http://hdl.handle.net/1850/9939
Date: 2003-12

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