Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS MOBILE Latch with High Voltage Swing

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dc.contributor.author Sudirgo, S.
dc.contributor.author Nandgaonkar, R.P.
dc.contributor.author Curanovic, B.
dc.contributor.author Hebding, J.
dc.contributor.author Hirschman, K.D.
dc.contributor.author Islam, S.S.
dc.contributor.author Rommel, Sean
dc.contributor.author Kurinec, Santosh
dc.contributor.author Thompson, P.E.
dc.contributor.author Jin, N.
dc.contributor.author Berger, P.R.
dc.date.accessioned 2009-06-25T16:33:29Z
dc.date.available 2009-06-25T16:33:29Z
dc.date.issued 2003-12
dc.identifier.isbn 0-7803-8139-4
dc.identifier.uri http://hdl.handle.net/1850/9939
dc.description IEEE conference proceedings of the 2003 international Semiconductor Device Research Symposium. en_US
dc.description.abstract The Si/SiGe RITDs grown by MBE have been monolithically integrated with CMOS for the first time. The integrated devices resulted in a PVCR (peak-to-valley current ratio) of 2.8 at room temperature, showing promise towards the realization of RITD/CMOS circuitry. A RITD-NMOS MOBILE latch has been demonstrated in Si. This logic element enables digital and ternary circuit design for high density storage. The I-V characteristics of the integrated CMOS/RITD devices and ID-VD characteristics of NMOS and PMOS have been studied. en_US
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject CMOS integrated circuits en_US
dc.subject Elemental semiconductors en_US
dc.subject Flip-flops en_US
dc.subject Ge-Si alloys en_US
dc.subject Monolithic integrated circuits en_US
dc.subject MOSFET en_US
dc.subject Resonant tunnelling diodes en_US
dc.subject Semiconductor materials en_US
dc.title Monolithically Integrated Si/SiGe Resonant Interband Tunneling Diodes/CMOS MOBILE Latch with High Voltage Swing en_US
dc.type Proceedings en_US

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