1.3 nm photoresponsivity in Si-based Ge1-xCx photodiodes

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Title: 1.3 nm photoresponsivity in Si-based Ge1-xCx photodiodes
Author: Shao, Xiaoping; Rommel, Sean; Orner, B.A.; Feng, H.; Dashiell, M.W.; Troeger, R.T.; Kolodzey, J.; Berger, Pual; Laursen, Thomas
Abstract: Ge12xCx/Si heterostructure photodiodes with nominal carbon percentages (0<x<0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type ~100! Si substrates. The p-Ge12xCx/n-Si photodiodes were fabricated and tested. The p-Ge12xCx/n-Si junction exhibits diode rectification with a reverse saturation current of about 10 pA/mm2 at 21 V and high reverse breakdown voltage, up to 280 V. A significant reduction in diode reverse leakage current was observed by adding C to Ge, but these effects saturated with more C. Photoresponsivity was observed from these Si-based p-Ge12xCx/n-Si photodiodes at a wavelength of >1.3 mm, compatible with fiber optic wavelengths. External quantum efficiency of these thin surface-normal photodetectors was measured up to 2.2%, which decreased as the carbon percentage was increased.
Description: Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/.
Record URI: http://hdl.handle.net/1850/9959
Date: 1998-04-13

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