1.3 nm photoresponsivity in Si-based Ge1-xCx photodiodes

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dc.contributor.author Shao, Xiaoping
dc.contributor.author Rommel, Sean
dc.contributor.author Orner, B.A.
dc.contributor.author Feng, H.
dc.contributor.author Dashiell, M.W.
dc.contributor.author Troeger, R.T.
dc.contributor.author Kolodzey, J.
dc.contributor.author Berger, Pual
dc.contributor.author Laursen, Thomas
dc.date.accessioned 2009-06-25T19:46:35Z
dc.date.available 2009-06-25T19:46:35Z
dc.date.issued 1998-04-13
dc.identifier.uri http://hdl.handle.net/1850/9959
dc.description Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/. en_US
dc.description.abstract Ge12xCx/Si heterostructure photodiodes with nominal carbon percentages (0<x<0.02), which exceed the solubility limit, were grown by solid source molecular beam epitaxy on n-type ~100! Si substrates. The p-Ge12xCx/n-Si photodiodes were fabricated and tested. The p-Ge12xCx/n-Si junction exhibits diode rectification with a reverse saturation current of about 10 pA/mm2 at 21 V and high reverse breakdown voltage, up to 280 V. A significant reduction in diode reverse leakage current was observed by adding C to Ge, but these effects saturated with more C. Photoresponsivity was observed from these Si-based p-Ge12xCx/n-Si photodiodes at a wavelength of >1.3 mm, compatible with fiber optic wavelengths. External quantum efficiency of these thin surface-normal photodetectors was measured up to 2.2%, which decreased as the carbon percentage was increased. en_US
dc.language.iso en_US en_US
dc.publisher Applied Physics Letters en_US
dc.relation.ispartofseries Vol. 72 en_US
dc.relation.ispartofseries No. 15 en_US
dc.subject Cost effective photonic devices en_US
dc.subject Fiber optic wavelengths en_US
dc.subject Quantum efficiency en_US
dc.subject Si platform en_US
dc.title 1.3 nm photoresponsivity in Si-based Ge1-xCx photodiodes en_US
dc.type Article en_US

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