A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy

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dc.contributor.author Shao, Xiaoping
dc.contributor.author Rommel, Sean
dc.contributor.author Orner, B.A.
dc.contributor.author Kolodzey, J.
dc.contributor.author Berger, Paul
dc.date.accessioned 2009-06-25T19:46:45Z
dc.date.available 2009-06-25T19:46:45Z
dc.date.issued 1997-09
dc.identifier.isbn 0018-9383
dc.identifier.uri http://hdl.handle.net/1850/9960
dc.description Copyright 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en_US
dc.description.abstract We report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0.998C 0.002 on an n-type Si substrate. Epitaxial Ge0.998C0.002 was grown on a (100) Si substrate by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification. The I-V characteristics of the p-GeC/n-Si diode indicate a reasonable reverse saturation current of 89 pA/μm2 at -1 V and a high reverse breakdown voltage in excess of -40 V. Photoresponse from the Ge0.998C0.002 p-n diode was observed from 1.3-μm laser excitation resulting in an external quantum efficiency of 1.4%. en_US
dc.language.iso en_US en_US
dc.publisher IEEE transactions on electron devices en_US
dc.relation.ispartofseries Vol. 18 en_US
dc.relation.ispartofseries Issue 9 en_US
dc.subject Electric breakdown en_US
dc.subject Elemental semiconductors en_US
dc.subject Germanium compounds en_US
dc.subject Molecular beam epitaxial growth en_US
dc.subject P-n heterojunctions en_US
dc.subject Photodiodes en_US
dc.subject Semiconductor diodes en_US
dc.subject Semiconductor growth en_US
dc.subject Semiconductor materials en_US
dc.subject Silicon en_US
dc.subject Solid-state rectifiers en_US
dc.title A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy en_US
dc.type Article en_US

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