Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios

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dc.contributor.author Chung, Sung-Yong
dc.contributor.author Jin, Niu
dc.contributor.author Yu, Ronghua
dc.contributor.author Berger, Paul
dc.contributor.author Thompson, Philip
dc.contributor.author Lake, Roger
dc.contributor.author Rommel, Sean
dc.contributor.author Kurinec, Santosh
dc.date.accessioned 2009-06-25T19:47:29Z
dc.date.available 2009-06-25T19:47:29Z
dc.date.issued 2003-12
dc.identifier.isbn 0-7803-7872-5
dc.identifier.uri http://hdl.handle.net/1850/9964
dc.description 2003 IEEE International conference proceedings on Electron Devices Meeting, 2003. IEDM '03 Technical Digest. en_US
dc.description.abstract We report the first monolithic vertical integration of a Si/SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics. en_US
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject Elemental semiconductors en_US
dc.subject Ge-Si alloys en_US
dc.subject Heterojunction bipolar transistors en_US
dc.subject Quantum theory en_US
dc.subject Resonant tunnelling diodes en_US
dc.subject Semiconductor device measurement en_US
dc.subject Semiconductor materials en_US
dc.subject Silicon en_US
dc.title Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios en_US
dc.type Proceedings en_US

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