Room temperature operation of epitaxially grown Si/Si0.5Ge0.5 /Si resonant interband tunneling diodes

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dc.contributor.author Rommel, Sean
dc.contributor.author Dillon, Thomas
dc.contributor.author Dashiell, M.W.
dc.contributor.author Feng, H.
dc.contributor.author Kolodzey, J.
dc.contributor.author Berger, Paul
dc.contributor.author Thompson, Phillip
dc.contributor.author Hobart, Karl
dc.contributor.author Lake, Roger
dc.contributor.author Seabaugh, Alan
dc.contributor.author Klimeck, Gerhard
dc.contributor.author Blanks, Daniel
dc.date.accessioned 2009-06-25T19:47:51Z
dc.date.available 2009-06-25T19:47:51Z
dc.date.issued 1998-10-12
dc.identifier.uri http://hdl.handle.net/1850/9966
dc.description Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/. en_US
dc.description.abstract Resonant interband tunneling diodes on silicon substrates are demonstrated using a Si/Si0.5Ge0.5 /Si heterostructure grown by low temperature molecular beam epitaxy which utilized both a central intrinsic spacer and d-doped injectors. A low substrate temperature of 370 °C was used during growth to ensure a high level of dopant incorporation. A B d-doping spike lowered the barrier for holes to populate the quantum well at the valence band discontinuity, and an Sb d-doping reduces the doping requirement of the n-type bulk Si by producing a deep n1 well. Samples studied from the as-grown wafers showed no evidence of negative differential resistance ~NDR!. The effect of postgrowth rapid thermal annealing temperature was studied on tunnel diode properties. Samples which underwent heat treatment at 700 and 800 °C for 1 min, in contrast, exhibited NDR behavior. The peak-to-valley current ratio ~PVCR! and peak current density of the tunnel diodes were found to depend strongly on d-doping placement and on the annealing conditions. PVCRs ranging up to 1.54 were measured at a peak current density of 3.2 kA/cm2. en_US
dc.language.iso en_US en_US
dc.publisher Applied Physics Letters en_US
dc.relation.ispartofseries Vol. 73 en_US
dc.relation.ispartofseries No. 15 en_US
dc.subject Complementary metal-oxide-semiconductor en_US
dc.subject Molecular beam epitaxy en_US
dc.subject Resonant interband tunneling diodes en_US
dc.title Room temperature operation of epitaxially grown Si/Si0.5Ge0.5 /Si resonant interband tunneling diodes en_US
dc.type Article en_US

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