pnp Si resonant interband tunnel diode with symmetrical NDR

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Title: pnp Si resonant interband tunnel diode with symmetrical NDR
Author: Jin, Niu; Berger, Phillip; Rommel, Sean; Thompson, P.E.; Hobart, K.D.
Abstract: A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The IN characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with J p of 2.0 kA/cm2
Description: Copyright 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Record URI: http://hdl.handle.net/1850/9967
Date: 2001-11-08

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