pnp Si resonant interband tunnel diode with symmetrical NDR

Show simple item record Jin, Niu Berger, Phillip Rommel, Sean Thompson, P.E. Hobart, K.D. 2009-06-25T19:48:01Z 2009-06-25T19:48:01Z 2001-11-08
dc.identifier.isbn 0013-5194
dc.description Copyright 2001 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en_US
dc.description.abstract A Si-based resonant interband tunnel diode (RITD) is presented with a pnp configuration so that an integrated RITD can be easily used to form a latch. The IN characteristics of this pnp RITD show symmetrical negative differential resistance (NDR) regions in both forward and reverse bias. The top diode shows a peak-to-valley current ratio (PVCR) of 1.63 with peak current density (Jp) of 1.5 kA/cm2, while the bottom diode shows a PVCR of 1.51 with J p of 2.0 kA/cm2 en_US
dc.language.iso en_US en_US
dc.publisher IEEE - Electronics letters en_US
dc.relation RIT Scholars content from RIT Digital Media Library has moved from to RIT Scholar Works, please update your feeds & links!
dc.relation.ispartofseries Vol. 37 en_US
dc.relation.ispartofseries No. 23 en_US
dc.subject Elemental semiconductors en_US
dc.subject Negative resistance en_US
dc.subject Resonant tunnelling diodes en_US
dc.subject Silicon en_US
dc.title pnp Si resonant interband tunnel diode with symmetrical NDR en_US
dc.type Article en_US

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