Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation

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Title: Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation
Author: Sudirgo, S.; Nandgaonkar, R.P.; Curanovic, B.; Hebding, J.L.; Saxer, R.L.; Islam, S.S.; Hirschman, K.D.; Rommel, Sean; Kurinec, Santosh; Thompson, P.E.; Jin, N.; Berger, P.R.
Abstract: The first demonstration of the monolithic integration of CMOS and Si/SiGe resonant interband tunnel diodes (RITD) with negative differential resistance (NDR) is reported in this paper. The Si/SiGe RITDs exhibited a peak-to-valley current ratio (PVCR) up to 2.8 and peak current density (Jp) of 0.26 kA/cm2 at room temperature. This study focused on the utilization of a pair of tunnel diodes connected in series to form a latch. Employing a FET to supply current into the latch, a RITD/NMOS monostable–bistable transition logic element (MOBILE) was realized. The latch exhibited a voltage swing of 84% at an applied supply voltage of 0.5 V. This logic element enables low voltage operation for high density circuit design of embedded memory.
Description: Solid-state electronics article. Please see www.ScienceDirect.com for more information.
Record URI: http://hdl.handle.net/1850/9970
Date: 2004-10

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