Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation

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dc.contributor.author Sudirgo, S.
dc.contributor.author Nandgaonkar, R.P.
dc.contributor.author Curanovic, B.
dc.contributor.author Hebding, J.L.
dc.contributor.author Saxer, R.L.
dc.contributor.author Islam, S.S.
dc.contributor.author Hirschman, K.D.
dc.contributor.author Rommel, Sean
dc.contributor.author Kurinec, Santosh
dc.contributor.author Thompson, P.E.
dc.contributor.author Jin, N.
dc.contributor.author Berger, P.R.
dc.date.accessioned 2009-06-25T19:48:34Z
dc.date.available 2009-06-25T19:48:34Z
dc.date.issued 2004-10
dc.identifier.uri http://hdl.handle.net/1850/9970
dc.description Solid-state electronics article. Please see www.ScienceDirect.com for more information. en_US
dc.description.abstract The first demonstration of the monolithic integration of CMOS and Si/SiGe resonant interband tunnel diodes (RITD) with negative differential resistance (NDR) is reported in this paper. The Si/SiGe RITDs exhibited a peak-to-valley current ratio (PVCR) up to 2.8 and peak current density (Jp) of 0.26 kA/cm2 at room temperature. This study focused on the utilization of a pair of tunnel diodes connected in series to form a latch. Employing a FET to supply current into the latch, a RITD/NMOS monostable–bistable transition logic element (MOBILE) was realized. The latch exhibited a voltage swing of 84% at an applied supply voltage of 0.5 V. This logic element enables low voltage operation for high density circuit design of embedded memory. en_US
dc.language.iso en_US en_US
dc.publisher Elsevier - Solid-State Electronics en_US
dc.relation.ispartofseries Vol. 48 en_US
dc.relation.ispartofseries No. 10-11 en_US
dc.subject CMOS en_US
dc.subject Resonant tunnel diode-field effect transistors en_US
dc.subject Resonant interband tunnel diode en_US
dc.subject RITD en_US
dc.title Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation en_US
dc.type Article en_US

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