Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOS

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dc.contributor.author Sudirgo, Stephen
dc.contributor.author Vega, Reinaldo
dc.contributor.author Nandgaonkar, Rohit
dc.contributor.author Hirschman, Karl
dc.contributor.author Rommel, Sean
dc.contributor.author Kurinec, Santosh
dc.contributor.author Thompson, Phillip
dc.contributor.author Jin, Niu
dc.contributor.author Berger, Paul
dc.date.accessioned 2009-06-25T19:49:37Z
dc.date.available 2009-06-25T19:49:37Z
dc.date.issued 2004-06
dc.identifier.uri http://hdl.handle.net/1850/9976
dc.description Copyright 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en_US
dc.description.abstract The incorporation of tunnel diodes with field effect transistors (FET) can improve the speed and power capability in electronic circuitry. This has been realized in III-V materials by demonstrating a low power refresh-free tunneling-SRAM and high performance compact A/D converter. A new thrust to integrate tunnel diodes with the mainstream CMOS technology led to the invention of Si/SiGe resonant interband tunnel diode (RITD) (S.L. Rommel et al., Appl. Phys. Lett., vol. 73, pp. 2191-93, 1998) with the highest reported peak-to-valley current ratio (PVCR) of 6.0 (K. Eberl, J. Crystal Growth, 227-228, pp. 770-76, 2001). The structure consists of a SiGe spacer i-layer sandwiched between two delta-doped planes grown by low-thermal molecular beam epitaxy (LT-MBE) (N. Jin et al., IEEE Trans. Elec. Dev., vol. 50, pp.1876-1884, 2003). By adjusting the spacer layer thickness, the peak current density (Jp) can be adjusted from 0.1 A/cm 2 up to 151 kA/cm2 (N. Jin et al., App. Phys. Lett., 83, pp. 3308-3310, 2003). Recently, monolithic integration of RITD with CMOS has been realized, demonstrating a low-voltage operation of a monostable-bistable logic element (MOBILE) (S.Sudirgo et al., Proc. 2003 Int. Semic. Dev. Res. Symp., pp. 22, 2003). In this study, RITD layers were grown through openings in a 300 nm thick chemical vapor deposition (CVD) SiO2 layer. en_US
dc.description.sponsorship en_US
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject CMOS integrated circuits en_US
dc.subject Current density en_US
dc.subject Doping profiles en_US
dc.subject Ge-Si alloys en_US
dc.title Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOS en_US
dc.type Article en_US

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