Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

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dc.contributor.author Dashiell, Michael
dc.contributor.author Troeger, Ralph
dc.contributor.author Rommel, Sean
dc.contributor.author Adam, Thomas
dc.contributor.author Berger, Paul
dc.contributor.author Guedj, C.
dc.contributor.author Kolodzey, James
dc.contributor.author Seabaugh, Alan
dc.contributor.author Lake, R.
dc.date.accessioned 2009-06-25T19:50:36Z
dc.date.available 2009-06-25T19:50:36Z
dc.date.issued 2000-09
dc.identifier.issn 0018-9383
dc.identifier.uri http://hdl.handle.net/1850/9979
dc.description Copyright 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en_US
dc.description.abstract We present the characteristics of uniformly doped silicon Esaki tunnel diodes grown by low temperature molecular beam epitaxy (Tgrowth=275°C) using in situ boron and phosphorus doping. The effects of ex situ thermal annealing are presented for temperatures between 640 and 800°C. A maximum peak to valley current ratio (PVCR) of 1.47 was obtained at the optimum annealing temperature of 680°C for 1 min. Peak and valley (excess) currents decreased more than two orders of magnitude as annealing temperatures and times were increased with rates empirically determined to have thermal activation energies of 2.2 and 2.4 eV respectively. The decrease in current density is attributed to widening of the tunneling barrier due to the diffusion of phosphorus and boron. A peak current density of 47 kA/cm2 (PVCR=1.3) was achieved and is the highest reported current density for a Si-based Esaki diode (grown by either epitaxy or by alloying). The temperature dependence of the current voltage characteristics of a Si Esaki diode in the range from 4.2 to 325 K indicated that both the peak current and the excess current are dominated by quantum mechanical tunneling rather than by recombination. The temperature dependence of the peak and valley currents is due to the band gap dependence of the tunneling probability. en_US
dc.language.iso en_US en_US
dc.publisher IEEE - Transactions on electron devices en_US
dc.relation.ispartofseries Vol. 47 en_US
dc.relation.ispartofseries No. 9 en_US
dc.subject Dopant diffusion en_US
dc.subject Molecular beam epitaxy en_US
dc.subject Negative differential resistance en_US
dc.subject Rapid thermal annealing en_US
dc.subject Silicon en_US
dc.subject Tunnel diodes en_US
dc.title Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing en_US
dc.type Article en_US

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