Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

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Title: Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
Author: Krom, R.; Pawlik, D.J.; Muhkerjee, S.; Pandharpure, S.; Kurinec, Santosh; Park, S-Y.; Yu, R.; Anisha, R.; Berger, P.R.; Thompson, P.E.; Rommel, Sean
Abstract: This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (JP) and PVCR up to 2.97 kA/cm2 and 3.08, respectively.
Description: Copyright 2007 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Record URI: http://hdl.handle.net/1850/9987
Date: 2007-12

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