High temperature characterization of Si/SiGe resonant interband tunnel diodes

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dc.contributor.author Pawlik, D.J.
dc.contributor.author Sudirgo, S.
dc.contributor.author Kurinec, Santosh
dc.contributor.author Thompson, P.E.
dc.contributor.author Berger, P.R.
dc.contributor.author Rommel, Sean
dc.date.accessioned 2009-06-25T19:53:21Z
dc.date.available 2009-06-25T19:53:21Z
dc.date.issued 2005-12
dc.identifier.isbn 1-4244-0083-X
dc.identifier.uri http://hdl.handle.net/1850/9996
dc.description Proceedings from the 2005 international IEEE Semiconductor Device Research Symposium. en_US
dc.description.abstract Co-integration of Si-based tunnel diodes and CMOS circuits has been proposed for several years as a means to lower power consumption, reduce operating voltage and shrink device count. Recently, the successful integration of Si/SiGe resonant interband tunnel diodes [1,2] with CMOS [3] was demonstrated with room temperature operation. However, integrated circuits realistically operate significantly above room temperature, usually around 373K. Therefore, SPICE models used by circuit designers must account for device performance variations due to temperature changes ranging from 300K to 473K. For circuit applications, the key tunnel diode parameters are the peak and valley current densities (Jp and Jv, respectively) as well as the peak-to-valley current ratio (PVCR). Previous high temperature studies on Si-based Esaki diodes [4-6] and Si/SiGe resonant interband tunnel diodes (RITD) [7] showed some dissimilar trends for PVCR. This study examines the high temperature operation of Si/SiGe RITD more closely up to 473K. en_US
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject CMOS en_US
dc.subject SPICE en_US
dc.subject Si/SiGe en_US
dc.title High temperature characterization of Si/SiGe resonant interband tunnel diodes en_US
dc.type Proceedings en_US

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