Ion implantation of porous silicon

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Title: Ion implantation of porous silicon
Author: Peng, C.; Fauchet, P.M.; Rehm, J.M.; McLendon, G.L.; Seiferth, F.; Kurinec, Santosh
Abstract: Investigates the ion implantation of porous silicon (Si). Properties of light-emitting Si; Application of continuous-wave and time dependent photoluminescence spectroscopies; Comparison of dopant implantation effect in varying doses.
Description: Applied Physics Letters article. Please see www.aip.org/ for more information.
Record URI: http://hdl.handle.net/1850/9998
Date: 1994-03-07

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